Electric dipole spin resonance
From Wikipedia, the free encyclopedia
In
quantum mechanics, electron possesses
electric charge 
and
magnetic moment 
whose absolute value equals to the
Bohr magneton 
. Contemporary computational techniques employ electron charge in
transistors to process information and electron spin in
magnetic storage devices to accumulate it. The emergent field of
spintronics
aims in unifying operations of these subsystems. For achieving this
goal, electron spin should be operated by electric fields, and
electric dipole spin resonance (EDSR) is one of the most efficient tools for achieving this goal. It allows performing
spin flip transitions by resonant

electric fields.
Theory
Electron spin resonance, also known as
electron paramagnetic resonance, is due to the coupling of electron magnetic moment

to the external magnetic field

through the
Hamiltonian 
describing its
Larmor precession. Magnetic moment

is related to electron
angular momentum 
as

, where

is a
Landé g-factor. For a free electron in vacuum

. Larmor interaction quantizes electron spin energy levels in a
dc magnetic field

as

, and a resonant
ac magnetic field 
of a frequency

results in
electron paramagnetic resonance.
Coupling electron spin to electric fields in vacuum and atoms
An electron moving in vacuum in an
ac electric field

sees, according to the
Lorentz transformation, an
ac magnetic field

in its
center of mass system. However, for slow electrons with

this field is so weak that its effect can be neglected. In atoms,
electron orbital and spin dynamics are coupled because of the electric
field of nuclei as it follows from the
Dirac equation. This coupling, known as
spin-orbit interaction, is small in the
fine-structure constant 
. However, this constant appears in a combination with the atomic number

as

,
[1] and this product is of the order of unity already in the middle of the
periodic table.
This enhancement of the coupling between the orbital and spin dynamics
originates from strong electric fields and electron velocities near
nuclei. While this mechanism is also expected to couple electron spin to
ac electric fields, such an effect has been probably never observed in atomic spectroscopy.
Basic mechanisms of Electric Dipole Spin Resonance in crystals
Most important, this enhanced spin-orbit coupling in atoms translates into
spin-orbit coupling in crystals formed from such atoms or ions that may be strong even for slow electrons. It becomes an essential part of the
band structure of their energy spectrum. The ratio of the spin-orbit splitting of the bands to the
forbidden gap becomes a parameter that evaluates the effect of spin-orbit coupling, and it is generically of the order of unity.
As a result, even slow electrons in solids experience strong
spin-orbit coupling. This means that the Hamiltonian of a free electron
in a crystal includes, side by side with the electron
quasimomentum 
also
Pauli matrices 
, and the terms including both of them are not small. Coupling of electron spin to the external
electromagnetic field can be found by the substitution

as is required by the
gauge invariance of the theory, here

is the
vector potential, and the substitution is known as Peierls substitution. And because the electric field

, it becomes coupled to the electron spin and can produce
spin-flip transitions.
Electric Dipole Spin Resonance (EDSR) is the
electron spin resonance driven by a resonant
ac electric field 
. Because the
Compton length 
cm entering into the
Bohr magneton 
and controlling the coupling of electron spin to
ac magnetic field

is much shorter than all characteristic lengths of
solid state physics, EDSR can be by orders of magnitude stronger than the
electron paramagnetic resonance driven by
ac magnetic field. EDSR was proposed by
Rashba.
[2]
EDSR is usually strongest in materials without the inversion center
where the two-fold degeneracy of the energy spectrum is lifted and
time-symmetric Hamiltonians include products of
Pauli matrices 
and odd powers of the quasimomemtum

. In such cases electron spin is coupled to the vector-potential

of electromagnetic field. Remarkably, EDSR on free electrons can be observed not only at the spin-resonance frequency

but also at its linear combinations with the
cyclotron resonance frequency

. In narrow-gap semiconductors with inversion center EDSR can emerge due direct coupling of electric field

to the anomalous coordinate

, see
Spin-orbit interaction.
EDSR is allowed both with free carriers and with electrons bound at defects. However, for transitions between
Kramers conjugate bound states its intensity is suppressed by a factor

where

is the separation between adjacent levels of the orbital motion.
Origin of high intensity of EDSR: Simplified theory and physical mechanism
As stated above, various mechanisms of EDSR operate in different
crystals. The mechanism of its generically high efficiency is
illustrated below as applied to electrons in direct-gap semiconductors
of the InSb type. If spin-orbit splitting of energy levels

is comparable to the forbidden gap

, the effective mass of an electron

and its
g-factor can be evaluated in the framework of the Kane scheme,
[3][4] see [[

perturbation theory]]

,
where

is a coupling parameter between the electron an valence bands, and

is the electron mass in vacuum.
Choosing the
spin-orbit coupling mechanism based on the anomalous coordinate

(see
spin-orbit coupling) under the condition

, we have

where

is electron quasimomentum. Then energy of an electron in a
ac electric field

is

An electron moving in vacuum with a velocity

in an
ac electric field

sees, according to the
Lorentz transformation ab effective magnetic field

. Its energy in this field

where

is the Bohr magneton and

is the speed of light. The ratio of these energies

.
This expression shows explicitly where the dominance of EDSR over the
electron paramagnetic resonance comes from. The numerator

0.5MeV of the second factor is a half of the Dirac gap while

is of atomic scale,

1eV.
The physical mechanism behind the enhancement is based on the fact that
inside crystals electrons move in strong field of nuclei, and in the
middle of the
periodic table the product

of the atomic number

and the
fine-structure constant 
is of the order of unity, and it is this product that plays the role of the effective coupling constant, cf.
spin-orbit coupling. However, one should bear in mind that the above arguments based on
effective mass approximation are not applicable to electrons localized in deep centers of the atomic scale. For them the
electron paramagnetic resonance is usually the dominant mechanism.
Experiment
EDSR was first observed experimentally with free carriers in
Indium antimonide (InSb), a semiconductor with strong
spin-orbit coupling.
Observations made under different experimental conditions allowed
demonstrate and investigate various mechanisms of EDSR. In a dirty
material, Bell
[5] observed a motionally narrowed EDSR line at

frequency against a background of a wide
cyclotron resonance band. MacCombe et al.
[6] working with high quality InSb observed isotropic EDSR driven by the

mechanism at the combinational frequency

where

is the
cyclotron resonance frequency. Strongly anisotropic EDSR band due to inversion-asymmetry

Dresselhaus
spin-orbit coupling was observed in InSb at the spin-flip frequency

by Dobrowolska et al.
[7] Spin-orbit coupling in
n-Ge that manifests itself through strongly anisotropic electron
g-factor results in EDSR through breaking translational symmetry by inhomogeneous electric fields

which mixes wave functions of different valleys.
[8] Infrared EDSR observed in semimagnetic semiconductor Cd

Mn

Se
[9] was ascribed
[10] to
spin-orbit coupling
through inhomogeneous exchange field. EDSR with free and trapped charge
carriers was observed and studied at a large variety of
three-dimensional (3D) systems including dislocations in Si,
[11] an element with notoriously weak
spin-orbit coupling. All above experiments were performed in the bulk of three-dimensional (3D) systems.
Applications
Principal applications of EDSR are expected in
quantum computing and semiconductor
spintronics
and are currently focused on low-dimensional systems. One of its main
goals is fast manipulation of individual electron spins at a nanometer
scale, e.g., in
quantum dots of about 50 nm size. Such dots can serve as
qubits of quantum computing circuits. Time-dependent magnetic fields

practically cannot address individual electron spins at such a scale,
but individual spins can be well addressed by time dependent electric
fields

produced by nanoscale gates. All basic mechanisms of EDSR listed above are operating in
quantum dots,
[12] but in A

B

compounds also the
hyperfine coupling of electron spins to nuclear spins plays an essential role.
[13][14][15] For achieving fast qubits operated by EDSR
[16] are needed nanostructures with strong
spin-orbit coupling. For the
Rashba interaction

the strength of interaction is characterized by the coefficient

. In InSb
quantum wires the magnitude of

of the atomic scale of about 1 eV

has been already achieved.
[17]
A different way for achieving fast spin qubits based on quantum dots
operated by EDSR is using nanomagnets producing inhomogeneous magnetic
fields,
[18] see
Spin-orbit interaction.
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